2N3584 datasheet(1/3 Pages) ISC

部件名	2N3584

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N3584

DESCRIPTION

·With TO-66 package

·Continuous collector current-IC=2A

·Power dissipation -PD=35W @TC=25℃

·VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A

APPLICATIONS

·High speed switching and linear amplification

·High-voltage operational amplifiers

·Switching regulators ,converters

·Deflection stages and high fidelity amplifers

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

375

V

VCEO

Collector-emitter voltage

Open base

250

V

VEBO

Emitter-base voltage

Open collector

6

V

IC

Collector current

2

A

ICM

Collector current-Peak

5

A

IB

Base current

1

A

PT

Total power dissipation

TC=25℃

35

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R(th) jc

Thermal resistance junction to case

5.0

℃/W

Fig.1 simplified outline (TO-66) and symbol

类似零件编号 - 2N3584

制造商	部件名	数据表	功能描述
Mospec Semiconductor	2N3584	217Kb / 4P	POWER TRANSISTORS(35W)
Boca Semiconductor Corp...	2N3584	224Kb / 4P	COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
Microsemi Corporation	2N3584	64Kb / 3P	5 Amp, 375V, High Voltage NPN Silicon Power Transistors
Microsemi Corporation	2N3584	65Kb / 2P	NPN HIGH POWER SILICON TRANSISTOR
Central Semiconductor C...	2N3584	51Kb / 1P	Power Transistors

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