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2N4912 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N4912 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2N4912 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.1A 1.3 V VBE(on) Base-Emitter On Voltage IC= 1A ; VCE= 1V 1.3 V ICEX Collector Cutoff Current VCE= 80V;VBE(off)= 1.5V VCE= 80V;VBE(off)= 1.5V;TC=150℃ 0.1 1.0 mA ICEO Collector Cutoff Current VCE= 40V; IB= 0 0.5 mA ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 50mA ; VCE= 1V 40 hFE-2 DC Current Gain IC= 500mA ; VCE= 1V 20 100 hFE-3 DC Current Gain IC= 1A ; VCE= 1V 10 fT Current-Gain —Bandwidth Product IC= 0.25A;VCE= 10V, ftest= 1MHz 3 MHz COB Output Capacitance IE= 0;VCB= 10V; ftest= 100kHz 100 pF |
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