2SC2085 datasheet(2/3 Pages) ISC

部件名	2SC2085

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2085

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC=100μA ;IE=0

300

V(BR)CEO

Collector-emitter breakdown voltage

IC=1mA ;IB=0

300

V(BR)EBO

Emitter-base breakdown voltage

IE=100μA ;IC=0

VCEsat

Collector-emitter saturation voltage

IC=100mA ;IB=10mA

5.0

VBE

Base-emitter on voltage

IC=50mA ; VCE=10V

1.2

ICEO

Collector cut-off current

VCE=300V;IB=0

μA

ICBO

Collector cut-off current

VCB=300V;IE=0

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

μA

hFE-1

DC current gain

IC=10mA ; VCE=10V

hFE -2

DC current gain

IC=50mA ; VCE=10V

150

COB

Output capacitance

IE=0; VCB=30V;f=1MHz

Transition frequency

IC=20mA ; VCE=30V

MHz

hFE-2 classifications

30-60

50-100

80-150

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