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2SC4430 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4430 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4430 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞ 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A;IB=1.2A 2.0 V VBEsat Base-emitter saturation voltage IC=6A;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.8A ; VCE=5V 10 40 hFE-2 DC current gain IC=4A ; VCE=5V 8 fT Transition frequency IC=0.8A ; VCE=10V 15 MHz COB Output capacitance VCB=10V;f=1MHz 215 pF Switching times ton Turn-on time 0.5 μs tstg Storage time 3.0 μs tf Fall time IC=8A;RL=50Ω IB1=1.6A;- IB2=3.2A VCC=400V 0.3 μs hFE-1 classifications K L M 10-20 15-30 20-40 |
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