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2SC4916 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4916 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4916 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=300mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 83 250 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 20 hFE-2 DC current gain IC=5A ; VCE=5V 3.8 8 Cob Collector output capacitance IE=0 ; VCB=10V,f=1MHz 160 pF VF Diode forward voltage IF=5A 1.3 1.8 V fT Transition frequency IE=0.1A ; VCE=10V 1 3 MHz Switching times resistive load ts Storage time 2.0 3.0 μs tf Fall time ICP=5A;IB1 =1A IB2=-2A; RL=39Ω 0.1 0.2 μs |
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