2SC5143 datasheet(2/4 Pages) ISC

部件名	2SC5143

功能描述	Silicon NPN Power Transistors

PDF	4 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 4 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC5143

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)EBO

Emitter-base breakdown voltage

IE=400mA ;IC=0

VCEsat

Collector-emitter saturation voltage

IC=6A; IB=1.5A

3.0

VBEsat

Base-emitter saturation voltage

IC=6A ;IB=1.5A

0.9

1.2

ICBO

Collector cut-off current

VCB=1700V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

250

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=6A ; VCE=5V

8.5

Cob

Collector output capacitance

IE=0 ; VCB=10V,f=1MHz

185

Diode forward voltage

IF=6A

1.8

Transition frequency

IE=0.1A ; VCE=10V

MHz

Switching times

(inductive load)

Storage time

μs

Fall time

ICP=5A;IB1(end) =1A

fH=31.5kHz

0.2

0.5

μs

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