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2SC5250 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5250 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5250 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IC=400mA ;IB=0 6 V ICES Collector cut-off current VCE=1500V; RBE=0 500 μA hFE-1 DC current gain IC=1A ; VCE=5V 6 25 hFE-2 DC current gain IC=5A ; VCE=5V 4 7 VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=1.25A 5 V VBE(sat) Base-emitter saturation voltage IC=5A ; IB=1.25A 1.5 V VECF Forward voltage of damper diode IF=8A 2 V tf Fall time ICP=5A;IB1=1A; fH=31.5kHz 0.2 0.4 μs |
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