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2SD600 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD600 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD600 100 V(BR)CEO Collector-emitter breakdown voltage 2SD600K IC=1mA; RBE=∞ 120 V 2SD600 100 V(BR)CBO Collector-base breakdown voltage 2SD600K IC=10μA ;IE=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA 0.4 V VBEsat Base-emitter saturation voltage IC=0.5A ;IB=50mA 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 1 μA IEBO Emitter cut-off current VEB=4V; IC=0 1 μA hFE-1 DC current gain IC=50mA ; VCE=5V 60 320 hFE-2 DC current gain IC=0.5A ; VCE=5V 20 fT Transition frequency IC=50mA ; VCE=10V 130 MHz COB Collector output capacitance f=1MHz ; VCB=10V 20 pF Switching times tf Fall time 0.1 μs toff Turn-off time 0.5 μs tstg Storage time IC=500mA ; VCE=12V IB1=-IB2=50mA 0.7 μs hFE-1 Classifications D E F 60-120 100-200 160-320 2 |
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