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2SD613 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD613 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD613 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ 85 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 100 V V(BR)EBO Emitter-base breakdown votage IE=5mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.4 A 2.0 V VBE Base-emitter voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 320 hFE-2 DC current gain IC=3A ; VCE=5V 20 fT Transition frequency IC=1A ; VCE=5V 15 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 110 pF hFE-1 classifications C D E F 40-80 60-120 100-200 160-320 2 |
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