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2SD633 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD633 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD633 2SD635 DESCRIPTION · ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD633 100 VCBO Collector-base voltage 2SD635 Open emitter 60 V 2SD633 100 VCEO Collector-emitter voltage 2SD635 Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IB B Base current 0.7 A PC Collector dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ |
类似零件编号 - 2SD633 |
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类似说明 - 2SD633 |
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