| 数据搜索系统,热门电子元器件搜索 |
|
2SD880 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD880 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD880 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBE Base-emitter on voltage IC=0.5A ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=60V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=0.5A ; VCE=5V 60 300 fT Transition frequency IC=0.5A ; VCE=5V;f=1MHz 3 MHz Switching times ton Turn-on time 1.2 μs ts Storage time 2.0 μs tf Fall time IC=10IB1=-10IB2=2A VCC=30V PW=30μs 1.1 μs hFE Classifications O Y GR 60-120 100-200 150-300 2 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |