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2SD1088 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1088 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 5 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1088 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=40mH 250 V VCEsat Collector-emitter saturation voltage IC=4A;IB=0.04A 2.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.04A 2.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.5 mA hFE-1 DC current gain IC=2A ; VCE=2V 2000 hFE-2 DC current gain IC=4A ; VCE=2V 200 COB Collector output capacitance f=1MHz;VCB=50V 35 pF |
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