2SD1238L datasheet(2/4 Pages) ISC

部件名	2SD1238L

功能描述	Silicon NPN Power Transistors

PDF	4 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 4 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD1238L

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=1mA ;RBE=∞

V(BR)CBO

Collector-base breakdown voltage

IC=1mA; IE=0

V(BR)EBO

Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat

Collector-emitter saturation voltage

IC=6A; IB=0.6A

0.4

ICBO

Collector cut-off current

VCB=80V; IE=0

0.1

IEBO

Emitter cut-off current

VEB=4V; IC=0

0.1

hFE-1

DC current gain

IC=1A ; VCE=2V

280

hFE-2

DC current gain

IC=6A ; VCE=2V

Transition frequency

IC=1A ; VCE=5V

MHz

Switching times

ton

Turn-on time

0.2

μs

Storage time

1.7

μs

Fall time

IC=5A;IB1=-IB2=-0.5A

VCC=50V;RL=10Ω

0.2

μs

hFE-1 Classifications

70-140

100-200

140-280

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