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2SD1541 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1541 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1541 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.75A 5.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.75A 1.5 V VCB=750V; IE=0 50 μA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA hFE DC current gain IC=2A ; VCE=10V 4 12 VF Diode forward voltage IC=-4A 2.2 V Switching times tstg Storage time 3.0 7.0 μs tf Fall time IC=2A IBend=0.75A;LLeak=5μH 0.75 μs |
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