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2SD2256 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2256 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Darlington Power Transistor 2SD2256 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA, RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA, IE= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA, IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A ,IB= 250mA 3.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 12A ,IB= 24mA 3.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 25A ,IB= 250mA 4.5 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 μA ICEO Collector Cutoff current VCE= 100V, RBE= ∞ 10 μA hFE-1 DC Current Gain IC= 12A ; VCE= 4V 2000 20000 hFE-2 DC Current Gain IC= 25A ; VCE= 4V 500 |
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