BD131 datasheet(1/3 Pages) ISC

部件名	BD131

功能描述	Silicon NPN Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD131

DESCRIPTION

·

·Complement to type BD132

·With TO-126 package

·High current (Max: 3A)

·Low voltage (Max: 45V)

APPLICATIONS

·For general purpose power applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

70

V

VCEO

Collector-emitter voltage

Open base

45

V

VEBO

Emitter -base voltage

Open collector

6

V

IC

Collector current (DC)

3

A

ICM

Collector current-Peak

6

A

IBM

Base current-Peak

0.5

A

PT

Total power dissipation

Tmb≤60℃

15

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

Thermal resistance from junction to ambient

100

K/W

Rth j-mb

Thermal resistance from junction to mounting base

6

K/W

类似零件编号 - BD131

制造商	部件名	数据表	功能描述
NXP Semiconductors	BD131	43Kb / 8P	NPN power transistor 1999 Apr 12
Savantic, Inc.	BD131	108Kb / 3P	Silicon NPN Power Transistors
Comset Semiconductor	BD131	101Kb / 2P	SILICON PLANAR EPITAXIAL POWER TRANSISTORS
Comset Semiconductor	BD131	62Kb / 2P	SILICON PLANAR EPITAXIAL POWER TRANSISTORS
Savantic, Inc.	BD131	110Kb / 3P	Silicon NPN Power Transistors

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类似说明 - BD131

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