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BD245 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 BD245
功能描述  isc Silicon NPN Power Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

BD245 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  BD245 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD245 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BD245 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD245/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BD245
45
BD245A
60
BD245B
80
V(BR)CEO
Collector-Emitter
Breakdown Voltage
BD245C
IC= 30mA ;IB=0
B
100
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
B
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2.5A
4.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= 3A ; VCE= 4V
1.6
V
VBE(on)-2
Base-Emitter On Voltage
IC= 10A ; VCE= 4V
3.0
V
BD245
VCE= 55V; VBE= 0
BD245A
VCE= 70V; VBE= 0
BD245B
VCE= 90V; VBE= 0
ICES
Collector
Cutoff Current
BD245C
VCE= 115V; VBE= 0
0.4
mA
BD245/A
VCE= 30V;IB= 0
ICEO
Collector
Cutoff Current
BD245B/C
VCE= 60V;IB= 0
0.7
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
1.0
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
40
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
20
hFE-3
DC Current Gain
IC= 10A ; VCE= 4V
4
fT
Current-Gain—Bandwidth Product
IC= 0.5A ;VCE= 10V,ftest= 1.0MHz
3.0
MHz
Switching times
ton
Turn-on Time
0.2
μs
toff
Turn-off Time
IC= 1A; IB1= -IB2= 0.1A;
RL=20Ω; VBE(OFF)= -3.7V
0.8
μs
isc Website：www.iscsemi.cn
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