SC309 datasheet(2/4 Pages) SAVANTIC

2 / 4 page

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC3090

CHARACTERISTICS

Tj=25

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=5mA ;RBE=<

500

V(BR)CBO

Collector-base breakdown voltage

IC=1mA ;IE=0

800

V(BR)EBO

Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat

Collector-emitter saturation voltage

IC=6A; IB=1.2A

1.0

VBEsat

Base-emitter saturation voltage

IC=6A; IB=1.2A

1.5

ICBO

Collector cut-off current

VCB=500V; IE=0

µA

IEBO

Emitter cut-off current

VEB=5V; IC=0

µA

hFE-1

DC current gain

IC=1.2A ; VCE=5V

hFE -2

DC current gain

IC=6A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

160

Transition frequency

IC=1.2A ; VCE=10V

MHz

Switching times

ton

Turn-on time

1.0

µs

Storage time

3.0

µs

Fall time

IC=7A; IB1=-IB2=1.4A

RL=28.6D,VCC=200V

1.0

µs

hFE-1 classifications

15-30

20-40

30-50

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