2SB965 datasheet(2/3 Pages) ISC

部件名	2SB965

功能描述	Silicon PNP Power Transistors

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB965

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-25mA ;IB=0

-120

VCEsat

Collector-emitter saturation voltage

IC=-4A ;IB=-0.4A

-1.5

VBEsat

Base-emitter saturation voltage

IC=-4A ;IB=-0.4A

-2.0

ICBO

Collector cut-off current

VCB=-120V; IE=0

-50

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-50

μA

hFE -1

DC current gain

IC=-1A ; VCE=-5V

320

hFE -2

DC current gain

IC=-4A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

150

Transition frequency

IC=-1A ; VCE=-5V

MHz

hFE-1 classifications

60-120

100-200

160-320

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