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BAV19-TAP 数据表(PDF) 2 Page - Vishay Siliconix

部件名 BAV19-TAP
功能描述  Small Signal Switching Diodes, High Voltage
PDF  5 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

BAV19-TAP 数据表(HTML) 2 Page - Vishay Siliconix

  BAV19-TAP Datasheet HTML 1Page - Vishay Siliconix BAV19-TAP Datasheet HTML 2Page - Vishay Siliconix BAV19-TAP Datasheet HTML 3Page - Vishay Siliconix BAV19-TAP Datasheet HTML 4Page - Vishay Siliconix BAV19-TAP Datasheet HTML 5Page - Vishay Siliconix  
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Document Number 85543
Rev. 1.7, 19-Feb-07
BAV17/18/19/20/21
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
l = 4 mm, TL = constant
RthJA
300
K/W
Junction temperature
Tj
175
°C
Storage temperature range
Tstg
- 65 to + 175
°C
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
VR = 20 V
BAV17
IR
100
nA
VR = 50 V
BAV18
IR
100
nA
VR = 100 V
BAV19
IR
100
nA
VR = 150 V
BAV20
IR
100
nA
VR = 200 V
BAV21
IR
100
nA
Tj = 100 °C, VR = 20 V
BAV17
IR
15
µA
Tj = 100 °C, VR = 50 V
BAV18
IR
15
µA
Tj = 100 °C, VR = 100V
BAV19
IR
15
µA
Tj = 100 °C, VR = 150 V
BAV20
IR
15
µA
Tj = 100 °C, VR = 200 V
BAV21
IR
15
µA
Breakdown voltage
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
BAV17
V(BR)
25
V
BAV18
V(BR)
60
V
BAV19
V(BR)
120
V
BAV20
V(BR)
200
V
BAV21
V(BR)
250
V
Diode capacitance
VR = 0, f = 1 MHz
CD
1.5
pF
Differential forward resistance
IF = 10 mA
rf
5
Ω
Reverse recovery time
IF = IR = 30 mA,
iR = 3 mA,
RL = 100 Ω
trr
50
ns



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