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W13009 数据表(PDF) 4 Page - STMicroelectronics

部件名 W13009
功能描述  High voltage fast-switching NPN power transistor
PDF  11 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

W13009 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STW13009
4/11
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICEV
Collector cut-off current
(VBE = -1.5 V)
VCE = 700 V
VCE = 700 V TC = 100°C
10
500
µA
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 10 V
10
µA
VCEO(sus)
(1)
1.
Pulsed duration = 300 ms, duty cycle
≤1.5 %
Collector-emitter
sustaining voltage
(IB = 0)
IC = 10 mA
400
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 4 A
_
IB = 0.8 A
IC = 5 A _ _
IB = 1 A
IC = 8 A _ _
IB = 1.6 A
IC = 12 A _ _
IB = 3 A
0.85
0.9
1.25
2.5
V
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 5 A
_
IB = 1 A
IC = 8 A _ _
IB = 1.6 A
1.2
1.6
V
V
hFE
(1)(2)
2.
Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to
ship either groups according to production availability. Please contact your nearest STMicroelectronics
sales office for delivery details.
DC current gain
IC = 5 A
_
VCE = 5 V
Group L
Group H
IC = 8 A
_ _
VCE = 5 V
15
23
10
28
36
30
ts
tf
Inductive load
Storage time
Fall time
IC = 5 A
VCC = 250 V
IB1 = 1 A
IB2 = -2 A
L = 200
µH
see Figure 9
1.6
60
2.5
110
µs
ns
ts
tf
Inductive load
Storage time
Fall time
IC = 5 A
VCC = 125 V
IB1 = - IB2 = 1.6 A
L = 200
µH
tc = 125 °C
see Figure 9
2.3
110
µs
ns



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