P3355

ETALDOC 702/7

Page 2 of 5

April 2005

SPECIFICATIONS

Electrical

At T = 25ºC and as reference circuit Fig. 2 unless otherwise stated.

Parameter

Conditions

Min

Typ

Max

Units

Insertion Loss

-

2.4

-

dB

Frequency Response

LF -3dB cutoff

HF -3dB cutoff

100Hz – 4kHz

-

-

-

10

30

-

-

-

±0.1

Hz

kHz

dB

Return Loss

200Hz – 4kHz

26

-

-

dB

Third Harmonic

Distortion

(1)

150Hz -3dBm in line

-

-

-76

dBm

Voltage Isolation

(2)

50Hz

DC

2.12

3.0

-

-

-

-

kVrms

kV

Operating Range:

Functional

Storage

0

-40

-

-

+70

+85

ºC

ºC

Lumped equivalent circuit parameters as Fig. 1

DC resistance

DCP

Primary

Secondary

126

173

-

-

154

211

Ω

Ω

Leakage inductance,

ΔL

3.6

-

6

mH

Shunt inductance, Lp

200Hz 1V

10

23

-

H

Shunt loss, Rp

200Hz 1V

20

24

-

k

Ω

Notes:

1. Third

harmonic

typically

exceeds

other

harmonics by 10dB.

2. Components are 100% tested at 3.25kVDC.

3. Caution:

do not pass DC through windings.

Telephone line current must be diverted using

semiconductor line hold circuit or choke.

4. At signal levels greater than 100mV, Lp will

increase and Rp will decrease slightly but the

effect is usually favourable to the return loss

characteristic.

Equivalent Circuit

Fig. 1

IDEAL

1:1

½ L

½ L

R

R

Patented