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2SC1815 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部件名 2SC1815
功能描述  NPN Type Plastic Encapsulate Transistors
PDF  2 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

2SC1815 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  2SC1815 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH 2SC1815 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
2SC1815
NPN Type
Plastic Encapsulate Transistors
TO-92
FEATURES
. Power Dissipation
PCM: 0.4 W ( Ta = 25
)
. Collector Current
ICM: 0.15 A
. Collector-Base Voltage
V(BR)CBO: 60 V
1. EMITTER
2. COLLECTOR
3. BASE
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25
)
TYPE NUMBER
SYMBOL
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
Collector-Base Breakdown Voltage
V(BR)CBO
IC = 100 µA, IE = 0 A
60
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC = 0.1 mA, IB = 0 A
50
-
-
V
Emitter-Base Breakdown Voltage
V(BR)EBO
IE = 100 µA, IC = 0 A
5
-
-
V
Collector Cut-Off Current
ICBO
VCB = 60 V, IE = 0 A
-
-
0.1
µA
Collector Cut-Off Current
ICEO
VCE = 50 V, IB = 0 A
-
-
0.1
µA
Emitter Cut-Off Current
IEBO
VEB = 5 V, IC = 0 A
-
-
0.1
µA
DC Current Gain
hFE
VCE = 6 V, IC = 2 mA
70
-
700
Collector-Emitter Saturation Voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
-
-
0.25
V
Base-Emitter Saturation Voltage
VBE(sat)
IC = 100 mA, IB = 10 mA
-
-
1
V
VCE = 10 V, IC = 1 mA,
Transition Frequency
fT
f = 30 MHz
80
-
-
MHz
Operating and Storage Junction
Temperature Range
TJ, TSTG
-
- 55 ~ +150
hFE VALUES ARE CLASSIFIED AS FOLLOWS:
Rank
O
Y
GR
BL
hFE
70 ~ 140
120 ~ 240
200 ~ 400
350 ~ 700
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
1
2 3
1
2
3
01-Jun-2002 Rev. A
Page 1 of 2
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


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