2SC2120 datasheet(1/2 Pages) SECOS

部件名	2SC2120

功能描述	NPN Type Plastic Encapsulate Transistors

PDF	2 Pages

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 2 page

Any changing of specification will not be informed individual

2S

C2120

http://www.SeCoSGmbH.com

Elektronische Bauelemente

FEATURES

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

35

IC

Collector Current -Continuous

0.8

A

PCM

Power Dissipation

0.6

W

TJ, Tstg

Junction and Storage Temperature

-55-150

℃

V

1 2

TO-92

1. EMITTER

2. COLLECTOR

.

BASE

1

2

3

01-Jun-2002 Rev. A

Page 1 of 2

NPN Type

Plastic Encapsulate Transistors

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 0.1mA , IE=0

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 10 mA , IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=0.1mA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 35V , IE=0

0.1

µA

Collector cut-off current

ICEO

VCE= 25V , IB=0

0.1

µA

Emitter cut-off current

IEBO

VEB= 5 V,

IC=0

0.1

µA

DC current gain

hFE

VCE=1 V, IC= 100mA

100

Collector-emitter saturation voltage

VCE(sat)

IC= 500 mA, IB= 20 mA

0.5

V

Base-emitter voltage

VBE

VCE= 1V, IC= 10mA

0.8

V

Transition frequency

f T

VCE= 5 V, IC= 10mA

100

MHz

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

35

320

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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