2SC2712 datasheet(1/1 Pages) SECOS

部件名	2SC2712

功能描述	NPN Silicon General Purpose Transistor

PDF	1 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 1 page

Any changing of specification will not be informed individual

2SC2712

NPN Silicon

General Purpose Transistor

*Power Dissipation

PCM:

150 mW (Tamb=25 C)

o

*Collector Current

ICM:

150 mA

*Collector-Base Voltage

V(BR)CBO:

60 V

*Operating and

TJ,TSTG:

-55~+150 C

o

http://www.SeCoSGmbH.com

Elektronische Bauelemente

ELECTRICAL

CHARACTERISTICS (Tamb=25

unless

otherwise

specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

C

o

FEATURES

Storage Junction Temperature Range

Collector

Base

Emitter

K

J

C

H

L

A

B S

G

V

3

1

2

D

Top View

1

2

3

*RoHS Compliant Product

Dim

Min

Max

A

2.800

3.040

B

1.200

1.400

C

0.890

1.110

D

0.370

0.500

G

1.780

2.040

H

0.013

0.100

J

0.085

0.177

K

0.450

0.600

L

0.890

1.020

S

2.100

2.500

V

0.450

0.600

All Dimension in mm

SOT-23

01-Jun-2002 Rev. A

Page

1 of 1

Collector-base breakdown voltage

V(BR)CBO

Ic= 100µA , IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA , IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100µA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 60 V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=5V, IC=0

0.1

µA

DC current gain

hFE

VCE=6V, IC=2mA

70

700

Collector-emitter saturation voltage

VCE(sat)

IC= 100mA, IB=10mA

0.1

0.25

V

Transition frequency

fT

VCE=10V, IC= 1mA

80

MHz

Output capacitance

Cob

VCB=10V, IE=0,f=1 MHz

2.0

3.5

pF

Noise Figure

NF

VCE=6V,IC=0.1mA,f=1kHz,

Rg=10k

Ω

1.0

10

dB

CLASSIFICATION OF hFE

Rank

O

Y

GR

BL

Range

70-140

120-240

200-400

350-700

Marking

LO

LY

LG

LL

A suffix of "-C" specifies halogen & lead-free

类似零件编号 - 2SC2712

制造商	部件名	数据表	功能描述
Toshiba Semiconductor	2SC2712	210Kb / 3P	TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS)
Weitron Technology	2SC2712	338Kb / 5P	Silicon NPN Transistors
Unisonic Technologies	2SC2712	113Kb / 4P	AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR
Toshiba Semiconductor	2SC2712	624Kb / 5P	Silicon NPN Epitaxial Type (PCT process)
Galaxy Semi-Conductor H...	2SC2712	173Kb / 4P	Silicon Epitaxial Planar Transistor Rev.A

More results

类似说明 - 2SC2712

制造商	部件名	数据表	功能描述
Zowie Technology Corpor...	BC847A	79Kb / 4P	GENERAL PURPOSE TRANSISTOR NPN SILICON
	BC849B	78Kb / 4P	GENERAL PURPOSE TRANSISTOR NPN SILICON
	MMBT3906	107Kb / 5P	GENERAL PURPOSE TRANSISTOR NPN SILICON
Weitron Technology	MMBT3904W	368Kb / 7P	General Purpose Transistor NPN Silicon
SeCoS Halbleitertechnol...	2SC1213	77Kb / 2P	NPN Silicon General Purpose Transistor
	2SC2235	181Kb / 2P	NPN Silicon General Purpose Transistor
	2SC2412	331Kb / 3P	NPN Silicon General Purpose Transistor
SEMTECH ELECTRONICS LTD...	MMBT4401	185Kb / 2P	NPN Silicon General Purpose Transistor
Zowie Technology Corpor...	MMBT2222AGH	84Kb / 5P	General Purpose Transistor NPN Silicon
SeCoS Halbleitertechnol...	2SC4618	456Kb / 2P	NPN Silicon General Purpose Transistor