Elektronische Bauelemente

2SC3356F

NPN Silicon

Plastic Encapsulated Transistor

01-June-2002 Rev. A

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

2

Emitter

1

Base

Collector

3

FEATURES

Low noise amplifier at VHF,

UHF and CATV band.

Low Noise and High Gain

High Power Gain

MARKING

R

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

20

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

3

V

Collector Current - Continuous

0.1

A

Total Device Dissipation

200

mW

Junction and Storage Temperature

150, -55~150

°C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Collector–Base Breakdown Voltage

20

-

-

V

Collector–Emitter Breakdown Voltage

12

-

-

V

Collector Cut-off Current

Emitter Cut-off Current

-

-

1

1

μA

μA

DC Current Gain

50

-

250

Transition Frequency

-

7

-

GHz

Collector Output Capacitance

NF

-

-

2

dB

*pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2%

Rank

Q

R

S

Coding

23

24

25

Range

50 - 100

80 - 160

125 – 250

Marking

R23

R24

R25

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-323

= hFE Coding

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

1.80

2.20

G

0.100 REF.

B

1.80

2.45

H

0.525 REF.

C

1.15

1.35

J

0.08

0.25

D

0.80

1.10

K

-

-

E

1.20

1.40

L

0.650 TYP.

F

0.20

0.40