2SC3650 datasheet(1/3 Pages) SECOS

部件名	2SC3650

功能描述	NPN Silicon Epitaxial Planar Transistor

PDF	3 Pages

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

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1 / 3 page

FEATURES

Low collector-emitter saturation voltage VCE(sat)

High DC current gain

Large current capacity

LF amp, various drivers, muting circuit

=25 C

o

MAXIMUM RATINGS (TA

unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

15

V

IC

Collector Current -Continuous

1.2

A

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25 C

o

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=10

µA, IE=0

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10

µA, IC=0

V

Collector cut-off current

ICBO

VCB=20V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=10 V, IC=0

0.1

µA

hFE1

VCE=5V, IC=500mA

3200

30

25

15

800

600

DC current gain

hFE2

VCE=5V, IC=10 A

Collector-emitter saturation voltage

VCE(sat)

IC=500 A, IB=10mA

0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=500 A, IB=10mA

1.2

V

Transition frequency

fT

VCE=10 V, IC=50mA

220

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

17

pF

MARKING

CF

Any changing of specification will not be informed individual

2SC3650

NPN Silicon

Epitaxial Planar Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

08-May-2007 Rev. A

Page 1 of 3

SOT-89

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

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