Any changing of specification will not be informed individual

2SC4672

NPN Silicon

Epitaxial Silicon Transistor

RoHS Compliant Product

http://www.SeCoSGmbH.com

Elektronische Bauelemente

SOT-89

Symbol

Parameter

Value

Collector Current (DC)

6

2

55~+150

50

60

2

5

Junction and

Total Power Dissipation

Emitter-Base Voltage

V

A

W

Storage Temperature

-

C

O

Collector-Emitter Voltage

V

Collector-Base Voltage

V

Units

Collector Current (Pulse)

o

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

C

*

Pulse width 380 s, Duty Cycle 2%

≦

≦

µ

Parameter

Symbol

Min

Typ.

Max

Uni

Test Conditions

Collector-Base Breakdown Voltage

-

-

V

50

-

-

V

-

-

V

-

-

100

nA

-

fT

-

MH

-

pF

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector Saturation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

t

60

6

0.35

V

2

V

210

400

25

120

-

2

500mA

Measured under pulse condition.

-

-

-

0.1

100

Emitter-Base Cutoff Current

-

nA

o

01-Jun-2002 Rev. A

Page 1 of 2

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.4

4.6

G

3.00 REF.

B

4.05

4.25

H

1.50 REF.

C

1.50

1.70

I

0.40

0.52

D

1.30

1.50

J

1.40

1.60

E

2.40

2.60

K

0.35

0.41

F

0.89

1.20

L

5 q TYP.

M

0.70 REF.

Description

The 2SC4672 is designed for low

frequency amplifier applications.

Features

* Excellent DC Current Gain Characteristics

Classification of hFE

Rank

A

B

120~240

200~400

Range