2SC5343 datasheet(1/2 Pages) SECOS

部件名	2SC5343

功能描述	NPN Transistor Plastic-Encapsulate Transistors

PDF	2 Pages

Scroll/Zoom	100%

制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 2 page

Elektronische Bauelemente

2SC5343

NPN Transistor

Plastic-Encapsulate Transistors

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

4.55±0.2

3.5±0.2

2.54±0.1

(1.27 Typ.)

0.46+0.1

–0.1

0.43+0.08

–0.07

1

3

2

1: Emitter

2: Collector

3: Base

1.25–0.2

+0.2

FEATURES

* Excellent hFE Linearity

: hFE(2)=100(Typ) at VCE=6V,IC=150mA

: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ)

* Low Noise: NF=1Db(Typ). At f=1KHz

ELECTRICAL CHARACTERISTICS Tamb=25

unless otherwise specified

Parameter

Symbol

Min

Typ.

Max

Uni

Test Conditions

Collector-Base Breakdown Voltage

B(BR)CBO

-

V

IC=100µA,IE=0

IC=10mA,IB=0

IE=10µA,IC=0

VCB=60V,IE=0

VEB=

IC=

VCE= V, IC=

VCE=

V, IC=1mA

VCB= 10 , f=1MHz,IE=0

50

-

V

-

V

ICBO

-

0.1

uA

IEBO

-

uA

VCE(sat)

-

hFE1

700

fT

-

MH

Cob

-

3.5

pF

z

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Emitter-Base Cutoff Current

Collector Saturation Voltage

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

t

60

5

70

0.1

0.25

V

5V,IC=0

100mA,IB=10mA

6

2mA

10

V

C

-

80

o

-

B(BR)CEO

B(BR)EBO

Noise Figure

NF

10

-

VCE= V, IC=

6

0.1mA,f=1KHz,Rg=10K

dB

MAXIMUM RATINGS

Symbol

Parameter

Value

Collector Current

5

0.2

55~+150

50

60

150

-

IC

Tstg

TJ,

Junction and

Total Power Dissipation

VEBO

PD

Emitter-Base Voltage

V

mA

W

Storage Temperature

C

O

VCEO

Collector-Emitter Voltage

V

VCBO

Collector-Base Voltage

V

Units

ABSOLUTE

Ta=25C unless otherwise noted

o

Base Current-Continuous

50

IB

mA

TO-92

01-Jun-2002 Rev. A

Page

1 of 2

CLASSIFICATION OF

hFE(1)

Rank

O

Y

G

L

Range

70-140

120-240

200-400

300-700

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

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