2SC5585 datasheet(1/2 Pages) SECOS

部件名	2SC5585

功能描述	NPN Silicon General Purpose Transistor

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制造商	SECOS [SeCoS Halbleitertechnologie GmbH]

网页	http://www.secosgmbh.com

标志

1 / 2 page

Any changing of specification will not be informed individual

RoHS Compliant Product

2SC5585

NPN Silicon

General Purpose Transistor

FEATURES

Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA

BX

MARKING CODE

High Current

Dim

Min

Max

A

1.50

1.70

B

0.78

0.82

C

0.80

0.82

D

0.28

0.32

G

0.90

1.10

H

0.00

0.10

J

0.10

0.20

K

0.35

0.41

L

0.49

0.51

S

1.50

1.70

All Dimension in mm

SOT-523

S

G

D

B

L

A

1

3

2

Top View

H

C

J

K

Elektronische Bauelemente

1.

Emitter

Maximum Ratings (Ta=25 oC unless otherwise specified)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

(continuous)

Collector power dissipation

Junction temperature

Storage temperature

Parameter

VCBO

VCEO

VEBO

PC

Tj

Tstg

15

V

A

W

12

6

0.5

IC

0.15

-55~+150

Symbol

Value

Unit

Electrical Characteristics (Tamb=25 o C unless otherwise specified)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current

gain

Collector-emitter saturation voltage

Collector Output capacitance

Parameter

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

fT

Cob

Min.

15

12

6

270

32

0

7.5

0.1

680

0.25

VIC=10

μA, IE=0

IC=1mA, IB=0

IE=10

μA, IC=0

VCB=15V, IE=0

VEB= 6V, IC=0

VCE=2V, IC=10mA

IC=200mA, IB=10mA

VCE=2V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1MHz

V

μA

V

MHz

pF

Typ.

Max.

Unit

Conditions

Transition frequency

01-Jun-2002 Rev. A

Page 1 of 2

2. Base

3. Collector

oC

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