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DTC114TCA 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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DTC114TCA 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() 01-Jun-2002 Rev. A Page 2 of 2 Elektronische Bauelemente MAXIMUM RATINGS* TA=25℃ unless otherwise noted LIMITS(DTC114T□) Symbol Parameter E UA KA CA SA Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 150 200 300 mW Tj Junction temperature 150 ℃ TJ, Tstg Junction and Storage Temperature -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 50µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=50µA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.5 uA Emitter cut-off current IEBO VEB=4V,IC=0 0.5 uA DC current gain hFE VCE=5V,IC=1mA 100 300 600 Collector-emitter saturation voltage VCE(sat) IC=10mA,IB=1mA 0.3 V Transition frequency fT VCE=10V,IE=-5mA, f=100MHz 250 MHz Imput resistor R1 7 10 13 kΩ Typical Characteristics http://www.SeCoSGmbH.com Any changing of specification will not be informed individua DTC114TE/DTC114TUA/DTC114TKA DTC114TCA/TC114TSA NP N Digital Transistors (Built-in Resistors) |
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