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DTC143TCA 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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DTC143TCA 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 2 page ![]() 01-Jun-2002 Rev. A Page 2 of 2 Elektronische Bauelemente http://www.SeCoSGmbH.com Any changing of specification will not be informed individua Absolute maximum ratings(Ta=25 ℃) Limits (DTC143T □ ) Parameter Symbol E UA CA KA SA Unit Collector-base voltage V(BR)CBO 50 V Collector-emitter voltage V(BR)CEO 50 V Emitter-base voltage V(BR)EBO 5 V Collector current IC 100 mA Collector Power dissipation PC 150 200 300 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Electrical characteristics (Ta=25 ℃) Typical Characteristics Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO 50 V Ic=50µA Collector-emitter breakdown voltage V(BR)CEO 50 V Ic=1mA Emitter-base breakdown voltage V(BR)EBO 5 V IE=50µA Collector cut-off current ICBO 0.5 µA VCB=50V Emitter cut-off current IEBO 0.5 µA VEB=4V Collector-emitter saturation voltage VCE(sat) 0.3 V IC=5mA,IB=0.25mA DC current transfer ratio hFE 100 600 VCE=5V,IC=1mA Input resistance R1 3.29 4.7 6.11 K Ω Transition frequency fT 250 MHz VO=10V ,IO=5mA,f=100MHz DTC1 43TE/DTC143TUA/DTC143TKA DTC1 43TCA/TC143TSA NP N Digital Transistors (Built-in Resistors) |
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