Any changing of specification will not be informed individual

SCS202PD

Dual Series Chips

Surface Mount Switching Diode

Dim

Min

Max

A

2.700

3.100

B

1.300

1.700

C

1.000

1.300

D

0.350

0.500

G

1.700

2.300

H

0.000

0.100

J

0.100

0.260

K

0.200

0.600

L

1.250

1.650

S

2.250

3.000

V

0.400

0.450

All Dimension in mm

SC-59

S

G

D

B

L

A

1

3

2

Top View

H

C

J

K

H

C

J

K

V

ANODE

3

C ATHODE

1

2

C ATHODE

Marking code: MO

2

1

3

2

1

3

S C -59

Rating

Symbol

Value

Unit

Peak reverse voltage

VRM (V)

80

Vdc

Vdc

DC reverse voltage

VR (V)

80

Peak forward current

Mean rectifying current

IFM (mA)

Io (mA)

Isurge (A)

300

100

mAdc

Surge current

4

mW

mW

Power dissipation (TOTAL)

Pd (mW)

200

Junction temperature

150

Storage temperature

-55~+155

P / N Type

N

ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Max

Unit

Forward voltage

(IF = 100)

VF (V)

CT(pF)

t rr(ns)

－

－

－

－

1.2

Vdc

(IR = 70uA)

Reverse current

IR

0.1

µAdc

Capacitance between terminals

(VR = 6, f = 1.0 MHz)

Reverse recovery time

(VR = 6, f = 5.0 MHz)

4

3.5

mVdc

1. FR–5 = 1.0 X 0.75 X 0.062 in. 2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

http://www.SeCoSGmbH.com

Elektronische Bauelemente

ºC

ºC

Application

Ultra high speed switching

Features

Four types of packaging are available.

Suitable for high packing density layout.

High reliability.

Construction

Silicon epitaxial planar

01-Jun-2002 Rev. A

Page 1 of 3

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free