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SD103AX 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

部件名 SD103AX
功能描述  Schottky Plastic-Encapsulated Diode
PDF  2 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SD103AX 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

  SD103AX Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SD103AX Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SD103AX
VOLTAGE 40 V, 350 mA
Schottky Plastic-Encapsulated Diode
01-June-2002 Rev. A
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
SOD-523
Dimensions in millimeters
The marking bar indicates the cathode.
1.1~1.3
0.7~0.9
0.15~0.25
0.1~0.3
0.5~0.7
1.5~1.7
0.07~0.2
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Low Reverse Recovery Time
Low Reverse Capacitance
MARKING: S4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single diode, rating 25
°C ambient temperature unless otherwise specified)
TYPE NUMBER
SYMBOL
VALUES
UNITS
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
V
RMS Reverse Voltage
VR(RMS)
28
V
Forward Continuous Current
IFM
350
mA
Repetitive Peak Forward Current @ t ≦ 1.0s
IFRM
1
A
Power Dissipation
PD
150
mW
Thermal Resistance Junction to Ambient Air
RθJA
300
/W
Storage temperature
TJ, TSTG
125, -65~125
ELECTRICAL RATINGS
(Rating 25
°C ambient temperature unless otherwise specified)
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Reverse breakdown voltage
V(BR)R
IR= 100µA
40
-
V
Reverse current
IRM
VR=30V
-
-
5.0
uA
Forward voltage
VF
IF=20mA
IF=200mA
-
-
0.37
0.60
mV
Capacitance between terminals
CT
VR=0, f=1MHz
-
50
-
pF
Reveres recovery time
trr
IF=IR=50mA to 200 mA,
IRR=0.1XIR, RL=100 Ω
-
10
-
nS


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