ST2SC945 datasheet(2/5 Pages) SEMTECH_ELEC

部件名	ST2SC945

功能描述	NPN Silicon Epitaxial Planar Transistor

PDF	5 Pages

Scroll/Zoom	100%

制造商	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

网页	http://www.semtech.net.cn

标志

2 / 5 page

Dated : 22/07/2004

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

ST 2SC945

Characteristics at Tamb=25

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE=6V, IC=1mA

Current Gain Group R

hFE

120

200

350

140

240

400

700

Collector Base Breakdown Voltage

at IC=100μA

V(BR)CBO

Collector Emitter Breakdown Voltage

at IC=10mA

V(BR)CEO

Emitter Base Breakdown Voltage

at IE=10μA

V(BR)EBO

Collector Cutoff Current

at VCB=40V

ICBO

0.1

μA

Emitter Cutoff Current

at VEB=3V

IEBO

0.1

μA

Collector Saturation Voltage

at IC=100mA, IB=10mA

VCE(sat)

0.15

0.3

Gain Bandwidth Product

at VCE=6V, IC=10mA

300

MHz

Output Capacitance

at VCB=6V, f=1MHz

COB

2.5

Noise Figure

at VCE=6V, IE=0.5mA

at f=1KHz, RS=500Ω

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