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SMS7401 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 SMS7401
功能描述  P-Channel Enhancement Mode Power Mos.FET
PDF  5 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SMS7401 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SMS7401 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SMS7401 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SMS7401 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SMS7401 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH SMS7401 Datasheet HTML 5Page - SeCoS Halbleitertechnologie GmbH  
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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
RDS(ON)
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
Tj=85
Static Drain-Source On-Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
VGS(th)
IGSS
IDSS
Crss
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-30
100
-1
0.105
0.115
0.125
0.135
0.155
6
0.17
3.9
0.21
40
0.24
15
380
55
40
±
V
V
nA
uA
nS
pF
Ω
VGS=0V
VDS=-15V
f=1.0MHz
VDD=-15V
ID=-1A
VGEN =-10V
RG=3Ω
VGS=-10V, ID=-2.8A
VGS=-4.5V, ID=-2.5A
VGS=0V, ID=-250uA
VGS=±12V,VDS=0V
VDS=-24V,VGS=0V
VDS=VGS, ID=-250uA
_
_
_
_
_
_
Forward On Voltage
VSD
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
-0.8
_
ID=-1.2A,VGS=0V.
V
-1.2
Forward Transconductance
Gfs
S
4
VDS=-10V, ID=-2.8A
_
_
_
-1
C
o
-0.4
On-State Drain Current
ID(ON)
-4
_
_
A
VDS=- 5V,VGS=-4.5V
_
-5
_
_
uA
VDS=-24V,VGS=0V,
VGS=-2.5V, ID=-1.5A
VGS=-1.8V, ID=-1A
RL =15Ω
Total Gate Charge
Qg
Qgs
Qgd
Gate-Source Chagre
Gate-Drain Chagre
5.8
_
_
0.8
_
_
1.5
_
_
nC
VGS=-4.5V
VDS=-15V
ID=-2A
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of
5
Elektronische Bauelemente
SMS7401
-2.8A, -30V,RDS(ON) 115m
P-Channel Enhancement Mode Power Mos.FET
Ω



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