Rev. B, Sep 2005

CMOS NAND Gate And NOR Gate

Operating Voltage Range : 2V ~ 5.5V

High Speed Operation

: tpd = 2.6ns TYP

Low Power Consumption : 1µ

µ

µ

µA (max)

MSOP-8A Package

■Applications

Palmtops

Digital Equipment

■

Description

ML74WLABSRG comprises of CMOS NAND gate and NOR gate,

manufactured using silicon gate CMOS processes. The small

quiescent current, which is one of the features of the CMOS logic,

gives way to high speed operations which enables LS-TTL.

With wave forming buffers connected internally, stabilized output

can be achieved as the series offers high noise immunity.

As the series is integrated into a mini molded, MSOP-8A package,

high density mounting is possible.

■

Features

High Speed Operation

: tpd = 2.6ns TYP (Vcc=5V)

Operating Voltage Range: 2V ~ 5.5V

Low Power Consumption: 1µA (max)

Small Package

: MSOP-8A

■

Pin Configuration

■

Function

NAND GATE

INPUT

OUTPUT

A

B

Y

H

H

L

H

L

H

L

H

H

L

L

H

NOR GATE

INPUT

OUTPUT

A

B

Y

H

H

L

H

L

L

L

H

L

L

L

H

H=High level

L=Low level

■

Absolute Maximum Ratings

Ta=-40°C~85°C

PARAMETER

SYMBOL

RATINGS

UNITS

Power Supply Voltage

Vcc

-0.5 ~ +6.0

V

Input voltage

-0.5 ~ +6.0

V

Output Voltage

-0.5 ~ Vcc +0.5

V

Input Diode Current

±20

mA

Output Diode current

±20

mA

Switch Output Current

±25

mA

Vcc, GND Current

±50

mA

Power Dissipation (Ta=25°C)

Pd

300

mW

Storage Temperature

Tstg

-65 ~ +150

°C

Note: Voltage is all Ground standardized.