SSG4913 datasheet(2/4 Pages) SECOS

2 / 4 page

Elektronische Bauelemente

SSG4913

P-Ch Enhancement Mode Power MOSFET

-3.5 A, -20 V, RDS(ON) 130 mΩ

01-December-2008 Rev. A

Page 2 of 4

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-20

VGS = 0, ID = -250 uA

Breakdown Voltage Temperature Coefficient

ΔBVDSS

ΔTJ

-0.028

V / °C Reference to 25°C, ID = -250 μA

Gate Threshold Voltage

VGS(th)

-0.4

-1.0

VDS = VGS, ID = -250 μA

Forward Transconductance

gfs

6.5

VDS = -5 V, ID = -3.5 A

Gate-Source Leakage Current

IGSS

±100

VGS = ±8 V

Drain-Source Leakage Current(Tj=25℃)

-1

VDS = -16 V, VGS = 0

Drain-Source Leakage Current(Tj=70℃)

IDSS

-25

VDS = -12 V, VGS = 0

130

VGS = -4.5 V, ID = -3.5 A

Static Drain-Source On-Resistance

RDS(ON)

180

mΩ

VGS = -2.5 V, ID = -3.0 A

Total Gate Charge

8.5

Gate-Source Charge

Qgs

0.8

Gate-Drain (“Miller”) Charge

Qgd

1.3

ID = -3.5 A

VDS = -5 V

VGS = -4.5 V

Turn-on Delay Time

Td(on)

6.5

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDD = -5 V

ID = -1 A

VGS = -4.5 V

RG = 6 Ω

Input Capacitance

Ciss

405

Output Capacitance

Coss

170

Reverse Transfer Capacitance

Crss

VGS = 0 V

VDS = -10 V

f = 1.0 MHz

SOURCE-DRAIN DIODE

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage

VSD

-1.2

IS= -2.1 A, VGS=0V

Continuous Source Current (Body Diode)

-2.1

VD = VG = 0 V, VS = -1.2 V

Notes:

1. Pulse width limited by Max. junction temperature.

2. Pulse width≦300us, duty cycle≦2%.

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