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SSG9563 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 SSG9563
功能描述  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SSG9563 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSG9563 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSG9563 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSG9563 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SSG9563 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
Notes: 1.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in copper pad of FR4 board;125 C/W when mounted on min. copper pad.
2
o
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
190
f=1.0MHz
10
S
VDS=-10V, ID=-6A
_
_
_
_
Crss
Gfs
Reverse Transfer Capacitance
Forward Transconductance
19
5
8
12
7
68
38
1600
240
nC
nS
pF
VGS=0V
VDS=-25V
VDD=-20V
ID=-1A
VGS=-10V
RG=3.3
RD=20
Ω
Ω
ID=-6A
VDS=-32V
VGS=-4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
40
60
mΩ
VGS=-10V, ID=-6 A
VGS=-4.5V, ID=-4A
_
_
30
2560
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
RDS(ON)
40
0.03
.0
-3.0
100
-1
-25
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=-250uA
VGS= 25V
±
VDS=-40V,VGS=0
VDS=-32V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
-
-
-1
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
BVDSS
BVDS/ Tj
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj= 70 )
VGS(th)
IGSS
oC
oC
2
2
2
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
_
_
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Unit
Forward On Voltage
Reverse Recovery Time
Trr
_
Reverse Recovery Change
_
37
54
6
Qrr
nC
nS
=-
S
A, VGS=0V.
2.0
=-
A, VGS=0V.
VSD
_
_
IS
V
-1.2
2
_
_
I
dl/dt=100A/us
Source-Drain Diode
Pulse width limited by Max. junction temperature.
2
Elektronische Bauelemente
SS
G9563
-6A, -40V,RDS(ON) 40m
P-Channel Enhancement Mode Power Mos.FET
Ω



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