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SSG9575 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 SSG9575
功能描述  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SSG9575 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSG9575
-6A, -60V,RDS(ON) 90m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
-60
-0.04
-1.0
-
3.0
100
-1
-25
90
120
18
5
7
12
5
68
32
2790
165
125
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=-25V
f=1.0MHz
VDD=-30V
ID=-1A
VGS=-10V
RG=3.3
RD=30
Ω
Ω
ID=-4A
VDS=-48V
VGS=-4.5V
VGS=-10V, ID=-4A
VGS=-4.5V, ID=-3A
VGS=0V, ID=-250uA
VGS= 25V
±
VDS=-60V,VGS=0
VDS=-48V,VGS=0
VDS=VGS, ID=-250uA
Reference to 25 ,ID=-1mA
_
_
_
Source-Drain Diode
_
_
_
_
_
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
VSD
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
IS=-2A, VGS=0V.
V
-1.2
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
≦
≦
2
Forward Transconductance
Gfs
S
7
VDS=-10V, ID=-4A
_
_
_
1745
28
Reverse Recovery Time
Reverse Recovery Charge
Is=-4A, VGS=0V
_
_
_
_
Trr
Qrr
nS
56
dl/dt=100A/us
3.Surface mounted on 1 inch2 copper pad of FR4 board; 135OC/W when mounted on min. copper pad.
nC
146
o
C
o
C
o
C
o
C
o
2
2
2
2
Ω
01-Jun-2002 Rev. A
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