Elektronische Bauelemente

SSL6679

P-Channel Enhancement Mode Power Mos.FET

Ω

Absolute Maximum Ratings

Drain-Source Voltage

Gate-Source Voltage

Pulsed Drain Current

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

A

V

V

A

A

W/ C

C

W

Tj, Tstg

-30

-75

-50

89

25

-300

±

0.71

-55~+150

Parameter

Symbol

Ratings

Unit

1

o

o

C

o

0 C

o

C

o

Thermal Data

Parameter

Symbol

Ratings

Unit

Thermal Resistance Junction-case

/W

C

Rthj-c

1.4

Thermal Resistance Junction-ambient

/W

C

Rthj-a

Max.

Max.

62

o

o

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

S

D

G

Description

Features

* Lower On-Resistance

* Simple Drive Requirement

* Fast Switching Characteristics

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.40

4.80

c2

1.25

1.45

b

0.76

1.00

b2

1.17

1.47

L4

0.00

0.30

D

8.6

9.0

c

0.36

0.5

e

2.54 REF.

L3

1.50 REF.

L

14.6

15.8

L1

2.29

2.79

0

8

E

9.80

10.4

L2

1.27 REF.

θ

o

o

The SSL6679 provide the designer with the best combination

The TO-263 is universally preferred for all commercial-industrial

surface mount applications and suited for low voltage applications

of fast switching, ruggedized device design, low on-resistance

and cost-effectiveness.

such as DC/DC converters and high efficiency switching

circuit.

RoHS Compliant Product