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SSM3055 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

部件名 SSM3055
功能描述  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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制造商  SECOS [SeCoS Halbleitertechnologie GmbH]
网页  http://www.secosgmbh.com
标志 SECOS - SeCoS Halbleitertechnologie GmbH

SSM3055 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSM3055
4A, 30V,RDS(ON) 80m
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C
Unless otherwise specified)
Total Gate Charge
RDS(ON)
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current (Tj=70 )
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
BVDSS
BVDS/ Tj
VGS(th)
IGSS
IDSS
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
30
0.037
1.0
3.0
100
25
250
80
100
5.4
1.3
3.6
3.6
19.8
13
3.2
260
144
13
±
V
V/
V
nA
uA
uA
m
nC
nS
pF
Ω
VGS=0V
VDS=25V
f=1.0MHz
VDD=15V
ID=1A
VGS=10V
RG=3.3
RD=1.9
Ω
Ω
ID=4A
VDS=24V
VGS=5V
VGS=10V, ID=4A
VGS=4.5V, ID=3A
VGS=0V, ID=250uA
VGS= 20V
±
VDS=30V,VGS=0
VDS=24V,VGS=0
VDS=VGS, ID=250uA
Reference to 25 ,ID=1mA
_
_
_
_
Source-Drain Diode
_
_
_
_
_
_
_
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Forward On Voltage
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
1
VDS
IS
ISM
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
VS=2A, VGS=0V.Tj=25
VD=VG=0V, Vs=1.3V
V
A
A
1.3
4
20
Notes: 1.Pulse width Limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
01-Jun-2002 Rev. A
Page 2 of 4
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