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SST2602 数据表(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SST2602 数据表(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page ![]() http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Notes: 1.Pulse width limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 01-Jun-2002 Rev. A Page 2 of 4 3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad. Elektronische Bauelemente SST2602 6.3A, 20V,RDS(ON) 34m N-Channel Enhancement Mode Power Mos.FET Ω Electrical Characteristics( Tj=25 C Unless otherwise specified) o Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage Reverse Recovery Time Trr _ Reverse Recovery Change _ Qrr nC nS 16.8 11 VSD _ _ IS=1.2A, VGS=0V. V 1.2 2 _ _ IS=5A, VGS=0V. dl/dt=100A/us 8.7 1.5 3.6 6 14 18.4 2.8 144 111 nC nS pF VGS=0V VDS=15V f=1.0MHz VDD=15V ID=1A VGS=10V RG=2 RD=15 Ω Ω ID=5.3A VDS=10V VGS= 4.5V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 20 0.1 0.5 100 1 10 30 34 ± V V/ Reference to 25C, ID=1m o oC V nA uA uA m 13 Ω VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=0V, ID=250uA VGS= 12V ± VDS=20V,VGS=0 VDS=16V,VGS=0 VDS=VGS, ID=250uA _ _ _ _ _ _ _ _ _ _ _ _ _ S VDS=5V, ID=5.3A _ _ _ _ 603 16 1085 A Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj IDSS Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=55 ) VGS(th) IGSS Forward Transconductance Gfs oC oC 2 2 Source-Drain Diode RDS(ON) 2 2 _ 50 _ _ 90 _ _ VGS=2.5V, ID=2.6A VGS=1.8V, ID=1.0A |
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