SDB720WS datasheet(1/2 Pages) SEMTECH_ELEC

部件名	SDB720WS

功能描述	SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

PDF	2 Pages

Scroll/Zoom	100%

制造商	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

网页	http://www.semtech.net.cn

标志

1 / 2 page

Dated : 16/01/2007

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

SDB720WS

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

for high frequency rectification

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

VRM

40

V

Reverse Voltage

VR

40

V

Average Forward Current

IO

0.5

A

Non-repetitive Peak Forward Surge Current

IFSM

2

A

Junction Temperature

Tj

125

O

C

Storage Temperature Range

Ts

- 55 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Typ.

Max.

Unit

Forward Voltage

at IF = 500 mA

VF

-

0.55

V

Reverse Current

at VR = 35 V

IR

-

100

µA

Terminal Capacitance

at VR = 0 V, f = 1 MHz

CT

60

-

pF

Reverse Recovery Time

at IF = IR = 100 mA, Irr = 10 mA, RL = 100 Ω

trr

5

-

nS

Anode

2

1

2

PINNING

1

Cathode

DESCRIPTION

RH

Top View

Marking Code: "RH"

Simplified outline SOD-323 and symbol

类似零件编号 - SDB720WS

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