BC337 datasheet(1/2 Pages) SEMTECH_ELEC

部件名	BC337

功能描述	NPN Silicon Epitaxial Planar Transistor

PDF	2 Pages

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制造商	SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]

网页	http://www.semtech.net.cn

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1 / 2 page

Dated : 27/12/2007

®

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

BC337…BC338

NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications

These types are subdivided into three groups -16,

-25 and -40, according to their DC current gain.

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Symbol

BC337

BC338

Unit

Collector Base Voltage

VCBO

50

30

V

Collector Emitter Voltage

VCEO

45

25

V

Emitter Base Voltage

VEBO

5

V

Collector Current

IC

800

mA

Peak Collector Current

ICM

1

A

Total Power Dissipation

Ptot

625

mW

Junction Temperature

Tj

150

O

C

Storage Temperature Range

TS

- 55 to + 150

O

C

Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at VCE = 1 V, IC = 100 mA

Current Gain Group

at VCE = 1 V, IC = 300 mA

-16

-25

-40

-16

-25

-40

hFE

100

160

250

60

100

170

-

250

400

630

-

Collector Base Cutoff Current

at VCB = 50 V

at VCB = 30 V

BC337

BC338

ICBO

-

100

nA

Collector Base Breakdown Voltage

at IC = 100 µA

BC337

BC338

V(BR)CBO

50

30

-

V

Collector Emitter Breakdown Voltage

at IC = 2 mA

BC337

BC338

V(BR)CEO

45

25

-

V

Emitter Base Breakdown Voltage

at IE = 100 µA

V(BR)EBO

5

-

V

Collector Emitter Saturation Voltage

at IC = 500 mA, IB = 50 mA

VCE(sat)

-

0.7

V

Base Emitter On Voltage

at VCE = 1 V, IC = 300 mA

VBE(on)

-

1.2

V

Gain Bandwidth Product

at VCE = 5 V, IC = 10 mA, f = 50 MHz

fT

-

100

-

MHz

Collector Base Capacitance

at VCB = 10 V, f = 1 MHz

CCBO

-

12

-

pF

1. Collector 2. Base 3. Emitter

TO-92 Plastic Package

类似零件编号 - BC337

制造商	部件名	数据表	功能描述
Motorola, Inc	BC337	163Kb / 4P	Amplifier Transistor
NXP Semiconductors	BC337	47Kb / 8P	NPN general purpose transistor 1999 Apr 15
Semtech Corporation	BC337	343Kb / 5P	NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications???
Siemens Semiconductor G...	BC337	150Kb / 6P	NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage)
Fairchild Semiconductor	BC337	27Kb / 3P	SWITCHING AND AMPLIFIER APPLICATIONS

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类似说明 - BC337

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