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EMP310 数据表(PDF) 1 Page - Excelics Semiconductor, Inc. |
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EMP310 数据表(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 3 page ![]() EMP310 UPDATED 05/08/2008 21.0 – 24.0 GHz Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised May 2008 Dimension: 2250um X 1000um Thickness: 75um ± 13um FEATURES • 21.0 – 24.0 GHz Operating Frequency Range • 24.0dBm Output Power at 1dB Compression • 14.0 dB Typical Small Signal Gain • -40dBc OIMD3 @Each Tone Pout 14dBm APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=170mA) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 21.0 24.0 GHz P1dB Output Power at 1dB Gain Compression 23.0 24.0 dBm Gss Small Signal Gain 11.0 14.0 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 14dBm -40 -37 dBc Input RL Input Return Loss -10 -8 dB Output RL Output Return Loss -10 -8 dB Idss Saturate Drain Current V DS =3V, VGS =0V 211 264 317 mA VDD Power Supply Voltage 7 8 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 34 oC/W Tb Operating Base Plate Temperature -35 +85 ºC ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION 1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 8 V VGS Gate to Source Voltage -4 V IDD Drain Current Idss IGSF Forward Gate Current 4mA PIN Input Power @ 3dB compression TCH Channel Temperature 150°C TSTG Storage Temperature -65/150°C PT Total Power Dissipation 3.4W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature |
类似零件编号 - EMP310 |
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类似说明 - EMP310 |
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