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EMP310 数据表(PDF) 1 Page - Excelics Semiconductor, Inc.

部件名 EMP310
功能描述  21.0 - 24.0 GHz Power Amplifier MMIC
PDF  3 Pages
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制造商  EXCELICS [Excelics Semiconductor, Inc.]
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标志 EXCELICS - Excelics Semiconductor, Inc.

EMP310 数据表(HTML) 1 Page - Excelics Semiconductor, Inc.

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EMP310
UPDATED 05/08/2008
21.0 – 24.0 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised May 2008
Dimension: 2250um X 1000um
Thickness: 75um ± 13um
FEATURES
21.0 – 24.0 GHz Operating Frequency Range
24.0dBm Output Power at 1dB Compression
14.0 dB Typical Small Signal Gain
-40dBc OIMD3 @Each Tone Pout 14dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, VDD=7V, IDQ=170mA)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
21.0
24.0
GHz
P1dB
Output Power at 1dB Gain Compression
23.0
24.0
dBm
Gss
Small Signal Gain
11.0
14.0
dB
OIMD3
Output 3
rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 14dBm
-40
-37
dBc
Input RL
Input Return Loss
-10
-8
dB
Output RL
Output Return Loss
-10
-8
dB
Idss
Saturate Drain Current
V
DS =3V, VGS =0V
211
264
317
mA
VDD
Power Supply Voltage
7
8
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
34
oC/W
Tb
Operating Base Plate Temperature
-35
+85
ºC
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS
Drain to Source Voltage
8 V
VGS
Gate to Source Voltage
-4 V
IDD
Drain Current
Idss
IGSF
Forward Gate Current
4mA
PIN
Input Power
@ 3dB compression
TCH
Channel Temperature
150°C
TSTG
Storage Temperature
-65/150°C
PT
Total Power Dissipation
3.4W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation VDS*IDS < (TCH –THS)/RTH; where THS = ambient temperature


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