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RFMA0912-2W 数据表(PDF) 1 Page - Excelics Semiconductor, Inc. |
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RFMA0912-2W 数据表(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 2 page ![]() RFMA0912-2W UPDATED 10/05/2007 9.50 – 11.70 GHz Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised October 2007 RFMA0912 Excelics -2W FEATURES • 9.50– 11.70GHz Operating Frequency Range • 32.5dBm Output Power at 1dB Compression • 30.0 dB Typical Power Gain @ 1dB Gain Compression • -41dBc Typical OIM3 @ each tone Pout 21.5dBm APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 9.50 11.70 GHz P1dB Output Power at 1dB Gain Compression 31.5 32.5 dBm G1dB Gain @ 1dB gain compression 27.0 30.0 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 21.5dBm -41 -38 dBc Input RL Input Return Loss -12 -8 dB Output RL Output Return Loss -15 -10 dB Idd Drain Current 1900 2150 mA Vdd Drain Voltage 7 8 V Vgg Gate Voltage -5 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 4.0 4.5 oC/W Tb Operating Base Plate Temperature -30 +80 ºC MAXIMUM RATINGS @25°C SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS 1,2 VDD Drain Supply Voltage 12V 8V VGG Gate Supply Voltage -8V -3V IDD Drain Current Idss 3.6A IGG Gate Current 240mA 40mA PIN Input Power 20dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C PT Total Power Dissipation 30.0W 25.2W 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –Tb)/RTH; where Tb = operating base plate temperature |
类似零件编号 - RFMA0912-2W |
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类似说明 - RFMA0912-2W |
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