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RFMA2124-1W 数据表(PDF) 1 Page - Excelics Semiconductor, Inc. |
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RFMA2124-1W 数据表(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 3 page ![]() RFMA2124-1W UPDATED 10/25/2006 21.2 – 23.6 GHz Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised November 2006 Excelics RFMA2124 -1W Different packages are available FEATURES • 21.2 – 23.6 GHz Operating Frequency Range • 28.5dBm Output Power at 1dB Compression • 22 dB Typical Power Gain @1dB gain Compression • -41dBc Typical OIM3 @ Each Tone Pout 18dBm APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 21.2 23.6 GHz P1dB Output Power at 1dB Gain Compression 27 28.5 dBm G1dB Gain @1dB gain compression 18 22 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 17dBm -41 -38 dBc Input RL Input Return Loss -10 dB Output RL Output Return Loss -15 -10 dB Idd Drain Current 1100 1400 mA Vdd Drain Voltage 7 8 V Vgg Gate Voltage -5 V Rth Thermal Resistance (Au-Sn Eutectic Attach) 7 7.5 oC/W Tb Operating Base Plate Temperature - 30 + 80 ºC MAXIMUM RATINGS AT 25°C SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS Vdd Drain Supply Voltage 12V 8V Vgg Gate Supply Voltage -8V -3 V Idd Drain Current Idss 1.9A Igg Gate Current 132mA 22 mA PIN Input Power 20dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –THS)/RTH; where THS = base plate temperature |
类似零件编号 - RFMA2124-1W |
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类似说明 - RFMA2124-1W |
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