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RFMA5065-2W 数据表(PDF) 1 Page - Excelics Semiconductor, Inc. |
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RFMA5065-2W 数据表(HTML) 1 Page - Excelics Semiconductor, Inc. |
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1 / 2 page ![]() RFMA5065-2W UPDATED 09/01/2006 5.0 – 6.5 GHz Power Amplifier MMIC Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised September 2006 Excelics RFMA5065 -2W-02 N/C Vg RF IN N/C RF OUT N/C N/C Vd FEATURES • 5.0 – 6.5 GHz Operating Frequency Range • 33dBm Output Power at 1dB Compression • 30.0 dB Typical Power Gain @1dB gain compression • -44dBc Typical OIM3 @ each tone Pout 22dBm APPLICATIONS • Point-to-point and point-to-multipoint radio • Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Tb = 25 °C, 50 ohm, Vdd=10V, Vgg=-5V) SYMBOL PARAMETER/TEST CONDITIONS MIN TYP MAX UNITS F Operating Frequency Range 5.0 6.5 GHz P1dB Output Power at 1dB Gain Compression 32 33 dBm G1dB Gain @1dB gain compression 28.0 32.0 dB OIMD3 Output 3 rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 22dBm -40 -44 dBc Input RL Input Return Loss -12 -6 dB Output RL Output Return Loss -6 dB Idd Drain Current @small signal output power level 1260 1500 mA Vdd Drain Supply Voltage 10 V Vgg Gate Supply Voltage -5 V Rth Thermal Resistance 4 4.5 oC/W Tb Operating Base Plate Temperature - 30 + 80 ºC MAXIMUM RATINGS @25°C1,2 SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS Vdd Drain Supply Voltage 14V 10V Vgg Gate Supply Voltage -10V -5.5 V Idq Quiescent Drain Current Idss 1.5A Igg Gate Current 150mA 50 mA PIN Input Power 8dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C Pt Total Power Dissipation 30W 15W 1. Operating the device beyond any of the above rating may reduce MTTF and cause permanent damage. 2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –Tb)/RTH |
类似零件编号 - RFMA5065-2W |
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类似说明 - RFMA5065-2W |
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