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RFMA5065-2W 数据表(PDF) 1 Page - Excelics Semiconductor, Inc.

部件名 RFMA5065-2W
功能描述  5.0 - 6.5 GHz Power Amplifier MMIC
PDF  2 Pages
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制造商  EXCELICS [Excelics Semiconductor, Inc.]
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标志 EXCELICS - Excelics Semiconductor, Inc.

RFMA5065-2W 数据表(HTML) 1 Page - Excelics Semiconductor, Inc.

  RFMA5065-2W Datasheet HTML 1Page - Excelics Semiconductor, Inc. RFMA5065-2W Datasheet HTML 2Page - Excelics Semiconductor, Inc.  
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RFMA5065-2W
UPDATED 09/01/2006
5.0 – 6.5 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised September 2006
Excelics
RFMA5065
-2W-02
N/C
Vg
RF IN
N/C
RF OUT
N/C
N/C
Vd
FEATURES
5.0 – 6.5 GHz Operating Frequency Range
33dBm Output Power at 1dB Compression
30.0 dB Typical Power Gain @1dB gain compression
-44dBc Typical OIM3 @ each tone Pout 22dBm
APPLICATIONS
Point-to-point and point-to-multipoint radio
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Tb = 25
°C, 50 ohm, Vdd=10V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
5.0
6.5
GHz
P1dB
Output Power at 1dB Gain Compression
32
33
dBm
G1dB
Gain @1dB gain compression
28.0
32.0
dB
OIMD3
Output 3
rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 22dBm
-40
-44
dBc
Input RL
Input Return Loss
-12
-6
dB
Output RL
Output Return Loss
-6
dB
Idd
Drain Current @small signal output power level
1260
1500
mA
Vdd
Drain Supply Voltage
10
V
Vgg
Gate Supply Voltage
-5
V
Rth
Thermal Resistance
4
4.5
oC/W
Tb
Operating Base Plate Temperature
- 30
+ 80
ºC
MAXIMUM RATINGS @25°C1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
Vdd
Drain Supply Voltage
14V
10V
Vgg
Gate Supply Voltage
-10V
-5.5 V
Idq
Quiescent Drain Current
Idss
1.5A
Igg
Gate Current
150mA
50 mA
PIN
Input Power
8dBm
@ 3dB compression
TCH
Channel Temperature
175°C
150°C
TSTG
Storage Temperature
-65/175°C
-65/150°C
Pt
Total Power Dissipation
30W
15W
1. Operating the device beyond any of the above rating may reduce MTTF and cause permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –Tb)/RTH


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