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7P20G-TN3-R 数据表(PDF) 2 Page - Unisonic Technologies

部件名 7P20G-TN3-R
功能描述  200V P-CHANNEL MOSFET
PDF  6 Pages
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制造商  UTC [Unisonic Technologies]
网页  http://www.utc-ic.com
标志 UTC - Unisonic Technologies

7P20G-TN3-R 数据表(HTML) 2 Page - Unisonic Technologies

  7P20G-TN3-R Datasheet HTML 1Page - Unisonic Technologies 7P20G-TN3-R Datasheet HTML 2Page - Unisonic Technologies 7P20G-TN3-R Datasheet HTML 3Page - Unisonic Technologies 7P20G-TN3-R Datasheet HTML 4Page - Unisonic Technologies 7P20G-TN3-R Datasheet HTML 5Page - Unisonic Technologies 7P20G-TN3-R Datasheet HTML 6Page - Unisonic Technologies  
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7P20
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 6
www.unisonic.com.tw
QW-R502-288.a
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-200
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current
ID
-5.7
A
Pulsed Drain Current (Note 2)
IDM
-22.8
A
Avalanche Current (Note 2)
IAR
-5.7
A
Single Pulsed Avalanche Energy (Note 3)
EAS
570
mJ
Repetitive Avalanche Energy (Note 2)
EAR
5.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.5
V/ns
Ta = 25°C
2.5
Power Dissipation
TC = 25°C
PD
55
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note:1.
2.
3.
4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
L=26.3mH, IAS=-5.7A, VDD=-50V, RG=25Ω
ISD≦-7.3A, di/dt≦300A/μs, VDD≦BVDSS
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient
θJA
110
℃
/W
Junction-to-Case
θJC
2.27
℃
/W
ELECTRICAL CHARACTERISTICS (Tc=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0 V, ID=-250 µA
-200
V
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/ΔTJ
ID=-250µA,
Referenced to25°C
-0.1
V/°C
Drain-Source Leakage Current
IDSS
VDS=-200V, VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±30V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-3.0
-5.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS=-10V, ID=-2.85A
0.54
0.69
Ω
Forward Transconductance
gFS
VDS=-40V, ID=-2.85A (Note 1)
3.7
S
DYNAMIC PARAMETERS
Input Capacitance
CISS
590
770
pF
Output Capacitance
COSS
140
180
pF
Reverse Transfer Capacitance
CRSS
VDS=-25V, VGS=0V, f=1.0MHz
25
35
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
19
25
nC
Gate Source Charge
QGS
4.6
nC
Gate Drain Charge
QGD
VDS=-160V, VGS=-10V,
ID=-7.3A (Note 1, 2)
9.5
nC
Turn-ON Delay Time
tD(ON)
15
40
ns
Turn-ON Rise Time
tR
110
230
ns
Turn-OFF Delay Time
tD(OFF)
30
70
ns
Turn-OFF Fall-Time
tF
VDD=-100V, ID=-7.3A,
RG=25Ω(Note 1, 2)
42
90
ns



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